Product Summary

The AHV85110 isolated gate driver is optimized for driving GaN FETs in multiple applications and topologies. The driver device includes an integrated isolated output bias supply, eliminating the need for an external gate drive auxiliary bias supply or high-side bootstrap. This significantly simplifies system design and reduces EMI by reducing the total common-mode capacitance. It is also capable of driving floating switches located anywhere in a switching power supply topology.

The driver has fast propagation delay and high peak source/sink capability to efficiently drive GaN FETs in high frequency designs. The high CMTI combined with isolated outputs for bias power and drive makes it ideal for applications requiring ground separation for isolation, level shifting or noise immunity.

Product features

・Transformer insulation barrier
・Power-Thru built-in isolation bias
- No high-side bootstrap required
- No external secondary bias required
・AEC-Q100 Grade 2 certified
- 50ns propagation delay
- Separate pull-up (2.8 Ω) and pull-down (1.0 Ω) drive output pins
Supply voltage: 10.5V < VDRV < 13.2V
- Primary VDRV and secondary VSEC undervoltage lockout
-High-speed response enable pin
- Continuous ON function: No need to recycle IN or recharge the bootstrap capacitor
・CMTI: Higher than 100 V/ns dv/dt immunity
- Creepage distance of 8.4mm
・Safety standard certification
- 5kV RMS VISO per UL1577
- Up to 8kV pk VIOTM transient isolation voltage

Target application

• AC-DC and DC-DC Converters: Totem-pole PFC, LLC Half/Full-Bridge, SR Drive, Multi-Level Converters, Phase-Shifted Full-Bridge
• In-vehicle: EV charger, on-board charger
• Industry: Data Centers, Transportation, Robotics, Audio
• Clean Energy: Microinverters, String Inverters, Solar Inverters

Click here for the manufacturer's site

• AHV85110 Product Page
• AHV85110 Datasheet
• AHV85110 Evaluation Board: APEK85110KNH-01-T-MH
• AHV85110 Evaluation Board: APEK85110KNH-05-T-MH
• AHV85110 Evaluation Board: APEK85110KNH-06-T

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